GP2400ESM12 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP2400ESM12 Datasheet PDF : 12 Pages
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GP2400ESM12
1600
1400
Conditions:
Tcase = 25˚C
Vce = 600V
Vge = 15V
1200
A
1000
B
800
C
600
400
200
0
0
A: Rg = 7Ω
B: Rg = 4.3Ω
C: Rg = 3.3Ω
400 800
1200 1600 2000 2400
Collector current, IC - (A)
Fig.9 Typical turn-off energy vs collector current
1800
1600
1400
Conditions:
Tcase = 125'C
Vce = 600V
Vge = 15V
A
1200
B
1000
C
800
600
400
A: Rg = 7Ω
200
B: Rg = 4.3Ω
C: Rg = 3.3Ω
0
0
400 800
1200 1600 2000 2400
Collector current, IC - (A)
Fig.10 Typical turn-off energy vs collector current
160
Conditions:
VCE = 600V
140 VGE = 15V
Rg = 3.3Ω
120
100
Tcase = 125˚C
80
Tcase = 25˚C
60
40
20
0
0
400
800 1200 1600 2000 2400
Collector current, IC - (A)
Fig.11 Typical diode reverse recovery charge vs collector current
3000
2500
2000
1500
Conditions:
Tcase = 125˚C
Vce = 600V
Vge = 15V
Rg = 3.3Ω
td(on)
td(off)
1000
tr
500
tf
0
0
400
800
1200 1600 2000
Collector current, IC - (A)
Fig.12 Typical switching characteristics
2400
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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