GP2400ESM12 Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP2400ESM12 Datasheet PDF : 12 Pages
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GP2400ESM12
TYPICAL CHARACTERISTICS
4800
4200
Common emitter
Tcase = 25˚C
Vge = 20/15/12/10V
3600
3000
2400
1800
1200
600
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Fig.5 Typical output characteristics
4800
4200
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
3600
3000
2400
1800
1200
600
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Fig.6 Typical output characteristics
1000
900
800
Conditions:
Tcase = 25˚C
Vce = 600V
Vge = 15V
700
Rg = 7Ω
600
Rg = 4.3Ω
500
400
Rg = 3.3Ω
300
200
100
0
0
400
800 1200 1600 2000 2400
Collector current, IC - (A)
Fig.7 Typical turn-on energy vs collector current
1200
1000
Conditions:
Tcase = 125˚C
Vce = 600V
Vge = 15V
800
A
B
600
C
400
200
0
0
A: Rg = 7Ω
B: Rg = 4.3Ω
C: Rg = 3.3Ω
400
800 1200 1600 2000 2400
Collector current, IC - (A)
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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