GP2400ESM12 Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP2400ESM12 Datasheet PDF : 12 Pages
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GP2400ESM12
ELECTRICAL CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
td(off)
Turn-off delay time
t
Fall time
f
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
EON
Turn-on energy loss
Q
Diode reverse recovery charge
rr
IC = 2400A
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 3.3Ω
L ~ 80nH
IF = 2400A, VR = 50% VCES,
dIF/dt = 2000A/µs
T = 125˚C unless stated otherwise.
case
Symbol
Parameter
td(off)
Turn-off delay time
tf
Fall time
EOFF
Turn-off energy loss
t
Turn-on delay time
d(on)
tr
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Test Conditions
IC = 2400A
VGE = ±15V
VCE = 600V
RG(ON) = RG(OFF) = 3.3Ω
L ~ 80nH
IF = 2400A, VR = 50% VCES,
dIF/dt = 2000A/µs
Min. Typ. Max. Units
-
2300
-
ns
-
400
-
ns
-
820
-
mJ
-
2600
-
ns
-
1100
-
ns
-
490
-
mJ
-
200
-
µC
Min. Typ. Max. Units
-
2570
-
ns
-
400
-
ns
-
980
-
mJ
-
2650
-
ns
-
1000
-
ns
-
620
-
mJ
-
400
-
µC
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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