GP2400ESM12 Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP2400ESM12 Datasheet PDF : 12 Pages
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ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
ICES
Collector cut-off current
IGES
V
GE(TH)
VCE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
IF
Diode forward current
I
Diode maximum forward current
FM
VF
Diode forward voltage
C
Input capacitance
ies
LM
Module inductance
GP2400ESM12
Test Conditions
Min. Typ. Max. Units
VGE = 0V, VCE = VCES
-
V = 0V, V = V , T = 125˚C
-
GE
CE
CES case
VGE = ±20V, VCE = 0V
-
IC = 120mA, VGE = VCE
4
VGE = 15V, IC = 2400A
-
VGE
=
15V,
I
C
=
2400A,
,
T
case
=
125˚C
-
DC, Tcase = 50˚C, Tj = 125˚C
-
tp = 1ms, Tj = 125˚C
-
IF = 2400A
-
IF = 2400A, Tcase = 125˚C
-
V = 25V, V = 0V, f = 1MHz
-
CE
GE
-
-
-
3
mA
-
100 mA
-
12 µA
-
7.5
V
2.7
3.5
V
3.2
4.0
V
-
2400 A
-
4800 A
2.2
2.4
V
2.3
2.5
V
270
-
nF
10
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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