GP800DDS12 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP800DDS12 Datasheet PDF : 11 Pages
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GP800DDS12
CURVES
1600
1400
Common emitter
Tcase = 25˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Fig.5 Typical output characteristics
1600
1400
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Fig.6 Typical output characteristics
160
Conditions:
Tcase = 25˚C,
140 VCE = 600V,
A
VGE = ±15V
120
B
100
80
C
60
40
20
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
0
0 100 200 300 400 500 600 700 800
Collector current, IC - (A)
Fig.7 Typical turn-on energy vs collector current
220
Conditions:
200 Tcase = 125˚C,
VCE = 600V,
A
180 VGE = ±15V
160
B
140
C
120
100
80
60
40
A : Rg = 6.8Ω
20
B : Rg = 4.7Ω
C : Rg = 3.3Ω
0
0 100 200 300 400 500 600 700 800
Collector current, IC - (A)
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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