GP800DDS12 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP800DDS12 Datasheet PDF : 11 Pages
| |||
SWITCHING DEFINITIONS
t4 + 5µs
∫ Eon = Vce.Icdt
t1
td(on) = t2 - t1
tr = t3 - t2
+15V
10%
0V
-15V
90%
10%
t1
t2
t3
t4
Fig.3 Definition of turn-on switching times
GP800DDS12
Vge
IC
Vce
+15V
90%
0V
-15V
Vge
t7 + 5µs
∫ Eoff = Vce.Icdt
t5
90%
td(off) = t6 - t5
10%
IC
tf = t7 - t6
Vce
t5
t6
t7
Fig.4 Definition of turn-off switching times
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/11
Share Link: 