GP800DDS12 Ver la hoja de datos (PDF) - Dynex Semiconductor

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GP800DDS12

Powerline N-Channel Dual Switch IGBT Module

Dynex Semiconductor 

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

ICES Collector cut-off current

I

GES

V

GE(TH)

Gate leakage current

Gate threshold voltage

V

Collector-emitter saturation voltage

CE(SAT)

IF

Diode forward current

IFM Diode maximum forward current

VF

Diode forward voltage

Cies Input capacitance

LM

Module inductance

GP800DDS12

Conditions

Min. Typ. Max. Units

VGE = 0V, VCE = VCES

-

VGE = 0V, VCE = VCES, Tcase = 125˚C -

V

GE

=

±20V,

V

CE

=

0V

-

IC = 120mA, VGE = VCE

4

VGE = 15V, IC =800A

-

VGE = 15V, IC = 800A, Tcase = 125˚C -

DC

-

-

1 mA

-

50 mA

-

±4 µA

-

7.5 V

2.7 3.5 V

3.2 4.0 V

- 800 A

tp = 1ms

-

- 1600 A

IF = 800A

- 2.2 2.4 V

IF = 800A, Tcase = 125˚C

- 2.3 2.5 V

VCE = 25V, VGE = 0V, f = 1MHz

-

90

-

nF

-

-

20

-

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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