GP800DDS12 Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP800DDS12 Datasheet PDF : 11 Pages
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GP800DDS12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
VCES
VGES
IC
IC(PK)
Pmax
V
isol
Collector-emitter voltage
VGE = 0V
Gate-emitter voltage
-
Collector current
Maximum power dissipation
Isolation voltage
DC, Tcase = 25˚C
DC, Tcase = 75˚C
1ms, T = 75˚C
case
Tcase = 25˚C (Transistor)
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Max.
1200
±20
1050
800
1600
6000
2500
Units
V
V
A
A
A
W
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Conditions
R
th(j-c)
Rth(j-c)
Rth(c-h)
T
j
Thermal resistance - transistor (per arm) DC junction to case
Thermal resistance - diode (per arm)
Thermal resistance - Case to heatsink
(per module)
Junction temperature
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Tstg
Storage temperature range
-
Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
-
21 oC/kW
-
-
40 oC/kW
-
8 oC/kW
-
150 oC
-
125 oC
–40 125 oC
-
5 Nm
-
2 Nm
-
10 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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