IXGA20N120 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGA20N120 Datasheet PDF : 2 Pages
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Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
IC(ON)
VGE = 10V, VCE = 10V
Q
g
Q
I = I , V = 15 V, V = 0.5 V
ge
C
C90 GE
CE
CES
Qgc
td(on)
Inductive load, TJ = 25°C
tri
IC = IC90, VGE = 15 V
td(off)
VCE = 800 V, RG = Roff = 47 Ω
tfi
Eoff
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher T or increased R
J
G
td(on)
tri
Eon
td(off)
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
tfi
increase for V (Clamp) > 0.8 V ,
CE
CES
Eoff
higher TJ or increased RG
R
thJC
R
thCK
TO-220
Characteristic Values
Min. Typ. Max.
12 16
S
1750
pF
90
pF
31
pF
90
A
63
nC
13
nC
26
nC
28
ns
20
ns
400 800 ns
380 700 ns
6.5 10.5 mJ
30
ns
27
ns
0.90
mJ
700
ns
550
ns
9.5
mJ
0.83 K/W
0.5
K/W
IXGA 20N120
IXGP 20N120
TO-220 AB Dimensions
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Bottom Side
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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