ACR400SE16 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
ACR400SE16 Datasheet PDF : 5 Pages
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DYNAMIC CHARACTERISTICS
Symbol
V
TM
IRRM/IDRM
dV/dt
dI/dt
V
T(TO)
r
T
IL
IH
td
tq
Parameter
Conditions
Maximum on-state voltage
At 1500A peak, Tcase = 25oC
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
Maximum linear rate of rise of off-state voltage To VDRM Tj = 125oC, Gate open circuit
Rate of rise of on-state current
From V to 125A
DRM
Gate source 15V, 15Ω
t = 50ns.
r
Threshold voltage
At T = 125oC
vj
On-state slope resistance
At T = 125oC
vj
Latching current
-
Holding current
-
Delay time
Turn-off time
VD = 300V, gate source = 15V, 15Ω
I
T
=
500A,
square
wave
50µs
pulse,
T
j
=
120˚C, dIRR/dt = 50A/µs,
dV/dt = 500V/µs to 75% VDRM.
ACR400SE
Min. Max. Units
-
3.25 V
-
60 mA
-
1000 V/µs
-
500 A/µs
-
1.8
V
-
0.9 mΩ
500
-
mA
100
-
mA
-
800 ns
-
10.0 µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
IGT
VFGM
VRGM
IFGM
PGM
Gate trigger voltage
Gate trigger current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
PG(AV)
Average gate power
Conditions
V
DWM
=
12V,
R
L
=
30Ω,
T
case
=
25oC
V
DWM
=
12V,
R
L
=
30Ω,
T
case
=
25oC
-
-
-
-
Average time 10ms max
Forward
Reverse
Typ. Max. Units
-
5
V
-
500 mA
-
40
V
-
10
V
-
10
A
-
40
W
-
10
W
-
-
W
3/5
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