XT2116-1201 Ver la hoja de datos (PDF) - Dynex Semiconductor

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Fabricante

XT2116-1201

Fast Turn-on Asymmetric Thyristor

Dynex Semiconductor 

XT2116

SURGE RATINGS

Symbol

ITSM

I2t

Parameter

Surge (non-repetitive) forward current

I2t for fusing

THERMAL AND MECHANICAL DATA

Symbol

Parameter

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Mounting torque

* Recommended value.

Conditions

10ms half sine; T = 125oC

case

Conditions

d.c.

Mounting torque 3.5Nm

with mounting compound

On-state (conducting)

Max.

800

3200

Units

A

A2s

Min. Max. Units

-

0.35 oC/W

-

0.25 oC/W

-

125

oC

-55 125

oC

3.5* 4.0 Nm

DYNAMIC CHARACTERISTICS

Tcase = 25˚C unless otherwise stated.

Symbol

Parameter

Conditions

Typ. Max. Units

VTM

Maximum on-state voltage

At I = 100A

T

-

IRRM/IDRM Peak reverse and off-state current

At VRRM/VDRM

-

dV/dt

Maximum linear rate of rise of off-state voltage Tj = 125oC, To VDRM, RGK = 47Ω

-

dI/dt

Rate of rise of on-state current

Half sine wave of 2µs, Tj = 125˚C

-

Gate

source

20V,

10Ω.

t

r

=

160ns

IL

Latching current

-

45

I

Holding current

H

-

35

t

Delay time

d

tq

Circuit commutated turn-off time

† Available to 10µs.

V = 400V, gate source = 500mA, t = 50ns

-

D

r

IT = 25A, VRM = 0V, VDR = VDWM, Tcase =120˚C,

-

RGK = 47Ω, dV/dt = 100V/µs.

2.0

V

10/10 mA

300 V/µs

2000 A/µs

-

mA

-

mA

250 ns

120† µs

2/4

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