GP200MLS12 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

GP200MLS12

IGBT Chopper Module

Dynex Semiconductor 

GP200MLS12

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

Test Conditions

ICES

IGES

VGE(TH)

V

CE(sat)

IF

IFM

V

F

Cies

LM

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

V = 0V, V = V

GE

CE

CES

VGE = 0V, VCE = VCES, Tcase = 125˚C

VGE = ±20V, VCE = 0V

IC = 10mA, VGE = VCE

VGE = 15V, IC = 200A

VGE = 15V, IC = 200A, , Tcase = 125˚C

DC

Diode maximum forward current

tp = 1ms

Diode forward voltage - antiparallel diode IF = 200A

IF = 200A, Tcase = 125˚C

Diode forward voltage - freewheel diode IF = 200A

I = 200A, T = 125˚C

F

case

Input capacitance

VCE = 25V, VGE = 0V, f = 1MHz

Module inductance

-

Min. Typ. Max. Units

-

-

1

mA

-

-

12 mA

-

-

±1 µA

4.5

-

6.5

V

-

2.7

3.5

V

-

3.2

4.0

V

-

-

200 A

-

-

400 A

-

2.2

2.4

V

-

2.3

2.5

V

-

1.7

2.1

V

-

1.7

2.2

V

25

-

nF

30

-

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/10

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