DFM1200EXM12-A000(2001) Ver la hoja de datos (PDF) - Dynex Semiconductor
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DFM1200EXM12-A000 Datasheet PDF : 7 Pages
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DFM1200EXM12-A000
TYPICAL CHARACTERISTICS
3200
2800
2400
2000
Tj = 25˚C
Tj = 125˚C
1600
1200
800
400
0
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, VF - (V)
Fig. 2 Diode typical forward characteristics
100
Diode
10
1
0.1
0.001
Diode
Ri (˚C/KW)
τi (ms)
1
0.1952
0.045
2
3
4
1.4194 1.8429 4.5492
2.889 21.7141 152.6381
0.01
0.1
1
10
Pulse width, tp - (s)
Fig. 4 Transient thermal impedance
8000
7000
6000
5000
4000
3000
2000
1000
0
0
20 40 60 80 100 120 140 160
Case temperature, Tcase - (˚C)
Fig. 5 Power dissipation
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
20 40 60 80 100 120 140 160
Case temperature, Tcase - (˚C)
Fig. 6DC current rating vs case temperature
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