MF34-1000 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
MF34-1000 Datasheet PDF : 7 Pages
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MF34
SURGE RATINGS
Symbol
Parameter
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
T
Storage temperature range
stg
-
Mounting torque
CHARACTERISTICS
Symbol
Parameter
V
Forward voltage
FM
I
Peak reverse current
RM
trr
Reverse recovery time
QR
Recovered charge
VTO
Threshold voltage
r
T
Slope resistance
Conditions
10ms half sine; with VRRM ≤ 10V, Tj = 125oC
10ms half sine; T = 125oC
j
Max.
400
800
Units
A
A2s
Conditions
dc
Mounting torque 3.5Nm
with mounting compound
Forward (conducting)
Reverse (blocking)
Min. Max. Units
-
0.8 oC/W
-
0.2 oC/W
-
125
oC
-
125
oC
-55 125 ˚C
3.5 4.0 Nm
Conditions
At 120A peak, T = 25oC
case
At V , T = 100oC
RRM case
IF = 1A, diRR/dt = 25A/µs, Tcase = 25˚C,
VR = 100V
IF = 50A, diRR/dt = 50A/µs, Tcase = 25˚C,
VR = 100V
At T = 125oC
vj
At T = 125oC
vj
Typ. Max. Units
-
2.0
V
-
5
mA
-
250 ns
-
25
µC
-
1.2
V
-
7.0 mΩ
2/7
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