GP400DDM12 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP400DDM12 Datasheet PDF : 9 Pages
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GP400DDM12
800
700
600
Tj = 25˚C
Tj = 125˚C
500
400
300
200
100
0
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, VF - (V)
Fig.7 Diode typical forward characteristics
1000
900
800
700
600
500
400
300
200 Tcase = 125˚C
Vge = ±15V
100 Rg = 4.7Ω *
*Recommended minimum value
0
0
200
400
600
800 1000
Collector-emitter voltage, Vce - (V)
1200
Fig.8 Reverse bias safe operating area
10000
1000 IC max. (single pulse)
100
10
100
10
tp = 50µs
tp = 100µs
1
tp = 1ms
Diode
Transistor
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig.9 Forward bias safe operating area
10000
0.1
1
10
100
1000
Pulse width, tp - (ms)
Fig.10 Transient thermal impedance
10000
69
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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