GP400DDM12 Ver la hoja de datos (PDF) - Dynex Semiconductor

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GP400DDM12

Dual Switch IGBT Module

Dynex Semiconductor 

GP400DDM12

ELECTRICAL CHARACTERISTICS

T = 25˚C unless stated otherwise

case

Symbol

Parameter

td(off)

Turn-off delay time

tf

Fall time

EOFF

Turn-off energy loss

td(on)

Turn-on delay time

tr

Rise time

E

Turn-on energy loss

ON

Qrr

Diode reverse recovery charge

Tcase = 125˚C unless stated otherwise

Symbol

Parameter

t

Turn-off delay time

d(off)

tf

Fall time

EOFF

Turn-off energy loss

td(on)

Turn-on delay time

t

Rise time

r

EON

Turn-on energy loss

Qrr

Diode reverse recovery charge

Test Conditions

IC = 400A

V

GE

=

±15V

VCE = 600V

RG(ON) = RG(OFF) = 4.7Ω

L ~ 100nH

IF = 400A, VR = 50% VCES,

dI /dt

F

=

2000A/µs

Min. Typ. Max. Units

-

800

-

ns

-

110

-

ns

-

65

-

mJ

-

700

-

ns

-

170

-

ns

-

45

-

mJ

-

30

-

µC

Test Conditions

IC = 400A

VGE = ±15V

V = 600V

CE

RG(ON) = RG(OFF) = 4.7Ω

L ~ 100nH

IF = 400A, VR = 50% VCES,

dI /dt

F

=

2000A/µs

Min. Typ. Max. Units

-

1000

-

ns

-

150

-

ns

-

80

-

mJ

-

800

-

ns

-

300

-

ns

-

75

-

mJ

-

65

-

µC

49

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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