GP400DDM12 Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP400DDM12 Datasheet PDF : 9 Pages
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GP400DDM12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
I
Collector cut-off current
CES
IGES
V
GE(TH)
VCE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
IF
Diode forward current
I
Diode maximum forward current
FM
VF
Diode forward voltage
Cies
Input capacitance
L
Module inductance
M
Test Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC = 120mA, VGE = VCE
VGE = 15V, IC = 800A
V = 15V, I = 800A, , T = 125˚C
GE
C
case
DC, Tcase = 50˚C
tp = 1ms
IF = 800A
I = 800A, T = 125˚C
F
case
VCE = 25V, VGE = 0V, f = 1MHz
-
Min. Typ. Max. Units
-
-
1
mA
-
-
20 mA
-
-
±2 µA
4.5
5.5
7.5
V
-
2.7
3.5
V
-
3.2
4
V
-
-
400 A
-
-
800 A
-
2.2
2.5
V
-
2.3
2.5
V
-
45
-
nF
-
20
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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