DIM800DDM12-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM800DDM12-A000 Datasheet PDF : 8 Pages
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DIM800DDM12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
td(on)
tr
EON
Qrr
Irr
Erec
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
IC = 800A
VGE = ±15V
VCE = 600V
RG(ON) = 2.7
RG(OFF) = 2.7
LS ~ 100nH
IF = 800A
VCE = 600V
dIF/dt = 4200A/μs
Min Typ. Max Units
1250
ns
170
ns
130
mJ
250
ns
250
ns
80
mJ
80
μC
380
A
30
mJ
Test Conditions
IC = 800A
VGE = ±15V
VCE = 600V
RG(ON) = 2.7
RG(OFF) = 2.7
LS ~ 100nH
IF = 800A
VCE = 600V
dIF/dt = 4000A/μs
Min Typ. Max Units
1500
ns
200
ns
160
mJ
400
ns
220
ns
120
mJ
160
μC
450
A
60
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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