DIM800DDM12-A000 Ver la hoja de datos (PDF) - Dynex Semiconductor
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Fabricante
DIM800DDM12-A000 Datasheet PDF : 8 Pages
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DIM800DDM12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
ICES
IGES
VGE(TH)
VCE(sat)
IF
IFM
VF
Cies
Qg
Cres
LM
RINT
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter
saturation voltage
Diode forward current
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125°C
VGE = ± 20V, VCE = 0V
IC = 40mA, VGE = VCE
VGE = 15V, IC = 800A
VGE = 15V, IC = 800A, Tj = 125°C
DC
Diode maximum forward current tp = 1ms
Diode forward voltage
IF = 800A
IF = 800A, Tj = 125°C
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
Gate charge
±15V
Reverse transfer capacitance
Module inductance – per switch
Internal transistor resistance –
per switch
VCE = 25V, VGE = 0V, f = 1MHz
SCData Short circuit current, ISC
Tj = 125°C, VCC = 900V
tp ≤ 10μs, VGE ≤ 15V
VCE (max) = VCES – L* x dI/dt
IEC 60747-9
Min Typ Max Units
1
mA
25 mA
4
μA
4.5 5.5 6.5
V
2.2 2.8
V
2.6 3.2
V
800 A
1600 A
2.1 2.4
V
2.1 2.4
V
90
nF
9
μC
nF
20
nH
270
μ
4500
A
Note:
* L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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