TA32910Q Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

TA32910Q

Asymmetric Thyristor

Dynex Semiconductor 

TA329..Q

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.

DO NOT SCALE.

2 holes 3.6 x 2.0 deep

(in both electrodes)

6.3

Cathode tab

Cathode

Ø 42 max

Ø19nom

Ø1.5

Gate

Ø19nom

Ø 38 max

Anode

Nominal weight: 50g

Clamping force: 3.5kN ±10%

Lead length: 250mm

Package outine type code: MU86

ASSOCIATED PUBLICATIONS

Title

Calculating the junction temperature or power semiconductors

Gate triggering and the use of gate characteristics

Recommendations for clamping power semiconductors

The effect of temperature on thyristor performance

Thyristor and diode measurement with a multi-meter

Turn-on performance of thyristors in parallel

Use of V , r on-state characteristic

TO T

Application Note

Number

AN4506

AN4840

AN4839

AN4870

AN4853

AN4999

AN5001

9/10

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