TA32912Q Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

TA32912Q

Asymmetric Thyristor

Dynex Semiconductor 

TA329..Q

Notes:

1. VD ≤ 600V.

2. VR = DF451 Diode voltage drop.

3. R.C. snubber. C = 0.1µF, R = 33Ω.

4. Double side cooled.

Fig.3 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C.

Notes:

1. dI/dt = 100A/µs.

2. VD ≤ 600V.

3. VR = DF451 Diode voltage drop.

4. R.C. snubber. C = 0.1µF, R = 33Ω.

5. Double side cooled.

Fig.4 Energy per pulse for trapezoidal pulses

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