TA32910Q Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

TA32910Q

Asymmetric Thyristor

Dynex Semiconductor 

TA329..Q

CURVES

Notes:

1. VD ≤ 600V.

2. VR = DF451 Diode voltage drop.

3. R.C. snubber. C = 0.1µF, R = 33Ω.

4. Double side cooled.

Fig.1 Energy per pulse for sinusoidal pulses.

Notes:

1. VD ≤ 600V.

2. VR = DF451 Diode voltage drop.

3. R.C. snubber. C = 0.1µF, R = 33Ω.

4. Double side cooled.

Fig.2 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C.

4/10

Share Link: