TA32912Q Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
TA32912Q Datasheet PDF : 10 Pages
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
I
GT
VRGM
IFGM
P
GM
P
G(AV)
Gate trigger voltage
Gate trigger current
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Average gate power
Conditions
VDWM = 12V, RL = 3Ω, Tcase = 25oC
VDWM = 12V, RL = 3Ω, Tcase = 25oC
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TA329..Q
Typ. Max. Units
-
4
V
-
250 mA
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7
V
-
10
A
-
50
W
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15
W
3/10
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