TA32914Q Ver la hoja de datos (PDF) - Dynex Semiconductor
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TA32914Q Datasheet PDF : 10 Pages
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TA329..Q
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
R
th(c-h)
Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 4.0kN
with mounting compound
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.085 oC/W
- 0.153 oC/W
- 0.204 oC/W
-
0.02 oC/W
-
0.04 oC/W
-
135
oC
-
125
oC
-40 150
oC
3.6 4.4
kN
DYNAMIC CHARACTERISTICS
Symbol
VTM
IRRM
I
DRM
dV/dt
dI/dt
t†
q
t
q
Parameter
Conditions
Maximum on-state voltage
At 600A peak, Tcase = 125oC
Peak reverse current
At VRRM, Tcase = 125oC
Off-state current
At V , T = 125oC
DRM case
Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit
Rate of rise of on-state current
Gate source 20V, 20Ω
t
r
≤
5µs.
Non-repetitive
Repetitive
Max. gate assisted turn-off time
(with feedback diode)
T = 125oC, I = 200A,
j
T(PK)
t
p
=
25µs
(half
sine
wave),
V = DF451 Diode voltage drop,
R
dV/dt
=
600V/µs
(linear
to
60%
V ),
DRM
V = -5V
GK
Max. turn-off time
(with feedback diode)
Tj = 125oC, ITM = 100A,
tp > 100µs, dIR/dt = 30A/µs, VR = 1V,
dV/dt = 600V/µs (linear to 60% VDRM),
Gate open.
Min. Max. Units
-
2.5
V
-
30 mA
-
1
mA
-
1000 V/µs
-
1000 A/µs
-
500 A/µs
-
7
µs
-
10
µs
2/10
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