TA32912Q Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

TA32912Q

Asymmetric Thyristor

Dynex Semiconductor 

Replaces March 1998 version, DS4680-2.1

APPLICATIONS

s High Frequency Applications

s High Power Choppers And Inverters

s Welding

s Ultrasonic Generators

s Induction Heating

s 400Hz UPS

s PWM Inverters

FEATURES

s Low Loss Asymmetrical Diffusion Structure

s High Interdigitated Amplifying Gate

s Gate Assisted Turn-off With Exclusive Bypass Diode

s Fully Characterised For Operation up to 40kHz

s Directly Compatible With 220-480 A.c. Mains

VOLTAGE RATINGS

Type Number

TA329 14 Q

TA329 12 Q

TA329 10 Q

Repetitive Peak

Off-state Voltage

V

DRM

V

1400

1200

1000

Repetitive Peak

Reverse Voltage

V

RRM

V

10

10

10

TA329..Q

TA329..Q

Asymmetric Thyristor

Advance Information

DS4680-3.0 January 2000

KEY PARAMETERS

VDRM

IT(RMS)

ITSM

dVdt

1400V

370A

2000A

1000V/µs

dI/dt

1000A/µs

tq

7.0µs

Lower voltage grades available.

CURRENT AND SURGE RATINGS

Symbol

Double Side Cooled

IT(RMS)

RMS value

Parameter

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

Outline type code: MU86.

See Package Details for further information.

Conditions

Max. Units

Half sine wave, duty cycle 50%, T = 80oC,

case

Tj = 125˚C.

Tj = 125oC, tp = 1ms, VR = 0

t

p

≥

10ms

370

A

2000

A

20 x 103 A2s

1/10

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