VP0300L(RevE) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
VP0300L Datasheet PDF : 4 Pages
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VP0300L/LS, VQ2001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
–2.0
VGS = –10 V
–9 V
–1.6
–8 V
–1.2
–7 V
–0.8
–6 V
–0.4
0
0
175
150
–5 V
–4 V
–1
–2
–3
–4
–5
VDS – Drain-to-Source Voltage (V)
Capacitance
VGS = 0 V
f = 1 MHz
125
100
75
Ciss
50
Coss
25
Crss
0
0
–5
–10 –15 –20 –25 –30
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.65
1.50
1.35
1.20
1.05
VGS = –4.5 V
ID = –0.5 A
VGS = –10 V
ID = –0.1 A
0.90
0.75
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
Document Number: 70217
S-04279—Rev. E, 16-Jul-01
–1000
–800
–600
Transfer Characteristics
TJ = –55_C
125_C
25_C
–400
–200
0
0
–18
–2
–4
–6
–8
–10
VGS – Gate-to-Source Voltage (V)
Gate Charge
–15
VDS = –15 V
–12
ID = –1 A
VDS = –24 V
–9
ID = –1 A
–6
–3
0
0
1000
2000
3000
4000
5000
Qg – Total Gate Charge (pC)
–10 K
Source-Drain Diode Forward Voltage
–1 K
TJ = 150_C
TJ = 25_C
–100
–10
–1
0
–0.5 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0
VSD – Source-to-Drain Voltage (V)
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