VP0300L(RevE) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
VP0300L Datasheet PDF : 4 Pages
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VP0300L/LS, VQ2001J/P
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-Resistanceb
Forward Transconductanceb
Common Source Output Conductanceb
Dynamic
IDSS
ID(on)
rDS(on)
gfs
gos
VGS = 0 V, ID = –10 mA
VDS = VGS, ID = –1 mA
VDS = 0 V, VGS = "16 V
TJ = 125_C
VDS = 0 V, VGS = "20 V
VDS = –24 V, VGS = 0 V
TJ = 125_C
VDS = –30 V, VGS = 0 V
VDS = –10 V, VGS = –12 V
VGS = –12 V, ID = –1 A
TJ = 125_C
VDS = –10 V, ID = –0.5 A
VDS = –7.5 V, ID = –0.05 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Ciss
Coss
Crss
VDS = –15 V, VGS = 0 V
f = 1 MHz
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
tON
tOFF
tON
tOFF
VDD = –25 V, RL = 23 W
ID ^ –1 A, VGEN = –10 V
RG = 25 W
VDD =–15 V, RL = 23 W
ID ^ –0.6 A, VGEN = –10 V
RG = 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Typa
–55
–3.1
–2.8
1.5
2.6
370
0.25
60
40
10
19
17
19
16
Limits
VP0300L/LS
VQ2001J/P
Min Max Min Max
Unit
–30
–30
V
–2
–4.5
–2
–4.5
"100
"500 nA
"100
–10
–500
–500
mA
–10
–1.5
–1.5
A
2.5
2
W
3.6
3.6
200
200
mS
150
150
100
100
pF
60
60
30
30
ns
30
30
VPEA03
www.vishay.com
11-2
Document Number: 70217
S-04279—Rev. E, 16-Jul-01
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