ALD1117PB(1998) Ver la hoja de datos (PDF) - Advanced Linear Devices
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ALD1117PB Datasheet PDF : 6 Pages
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range PA, SA, PB, SB package
DA, DB package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Parameter Symbol
Gate Threshold VT
Voltage
Min
-0.4
ALD1107
Typ
-0.7
Max
-1.0
Offset Voltage
VGS1-VGS2
VOS
Gate Threshold
Temperature
Drift 2
TCVT
2
10
-1.3
On Drain
Current
IDS (ON) -1.3
-2
Transconductance GIS
0.25
0.67
Mismatch
∆Gfs
0.5
Output
GOS
40
Conductance
Drain Source RDS (ON)
On Resistance
1200
1800
Drain Source
On Resistance ∆RDS (ON)
0.5
Mismatch
Drain Source
Breakdown
BVDSS
-12
Voltage
Off Drain
Current 1
IDS (OFF)
10
400
4
Gate Leakage IGSS
Current
0.1
10
1
Input
CISS
Capacitance 2
1
3
Min
-0.4
-1.3
0.25
-12
ALD1117
Typ
-0.7
Max
-1.0
2
10
-1.3
-2
0.67
0.5
40
1200
1800
0.5
10
400
4
0.1
10
1
1
3
-13.2V
-13.2V
500 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
Test
Unit
Conditions
V
IDS = -1.0µA VGS = VDS
mV IDS = -10µA VGS = VDS
mV/°C
mA VGS = VDS = -5V
mmho VDS = -5V IDS = -10mA
%
µmho VDS = -5V IDS = -10mA
Ω
VDS = -0.1V VGS = -5V
%
VDS = -0.1V VGS = -5V
V
IDS = -1.0µA VGS = 0V
pA
VDS = -12V VGS = 0V
nA
TA = 125°C
pA
VDS = 0V VGS = -12V
nA
TA = 125°C
pF
Notes: 1 Consists of junction leakage currents
2 Sample tested parameters
ALD1107/ALD1117
Advanced Linear Devices
2
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