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VNQ05XSP1613TR Ver la hoja de datos (PDF) - STMicroelectronics

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VNQ05XSP1613TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
VNQ05XSP1613TR Datasheet PDF : 17 Pages
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VNQ05XSP16
ELECTRICAL TRANSIENT REQUIREMENTS
ISO T/R
7637/1
Test Pulse
Test Levels
I
Test Levels
II
Test Levels
III
Test Levels
IV
Test Levels
Delays and Impedance
1
-25V
-50V
-75V
-100V
2ms, 10
2
+25V
+50V
+75V
+100V
0.2ms, 10
3a
-25V
-50V
-100V
-150V
0.1µs, 50
3b
+25V
+50V
+75V
+100V
0.1µs, 50
4
-4V
-5V
-6V
-7V
10ms, 0.01
5
+26.5V
+46.5V
+66.5V
+86.5V
400ms, 2
) ISO T/R
t(s 7637/1
c Test Pulse
u 1
d 2
ro 3a
P 3b
te 4
le 5
Test Levels Result
I
C
C
C
C
C
C
Test Levels Result
II
C
C
C
C
C
E
Test Levels Result
III
C
C
C
C
C
E
Test Levels Result
IV
C
C
C
C
C
E
so Class
b C
- O E
Contents
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
t(s) Figure 2: Switching Characteristics (Resistive load RL=1.3)
c VOUT
rodu80%
PdVOUT/dt(on)
te tr
Obsole ISENSE
90%
10%
90%
dVOUT/dt(off)
tf
t
INPUT
tDSENSE
t
td(on)
td(off)
t
7/17
1

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