MGFC5216 Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
Número de pieza
componentes Descripción
Fabricante
MGFC5216 Datasheet PDF : 4 Pages
| |||
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5216
Q-Band 4-Stage Driver Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
X=1.99 mm
Y=0.83 mm
Bond Pad Dimension=0.07 x 0.15 mm2 (RF)
0.1 x 0.1 mm2 (DC)
(630.0, 700.0) (1395.0, 700.0)
(270.0, 700.0) (990.0, 700.0)
(115.0, 445.0)
RFin
RFout
(1875.0, 445.0)
(165.0, 125.5)
(965.0, 130.0) (1695.0, 130.0)
(515.0, 130.0)
(1350.0, 130.0)
Vg1
Vg2
Vg3
Vg4
RFin
RFout
GND
Vd1
Vd2
Vd3
Vd4
MITSUBISHI
ELECTRIC
as of July '98
Share Link: 