IRF1302S Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
IRF1302S Datasheet PDF : 11 Pages
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IRF1302S/IRF1302L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max.
20 ––– –––
––– 0.021 –––
––– 3.3 4.0
2.0 ––– 4.0
59 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 79 120
––– 18 27
––– 31 46
––– 28 –––
––– 130 –––
––– 47 –––
––– 16 –––
––– 4.5 –––
––– 7.5 –––
––– 3600 –––
––– 2370 –––
––– 520 –––
––– 5710 –––
––– 2370 –––
––– 3540 –––
Units
V
V/°C
mΩ
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 104A
VDS = 10V, ID = 250µA
VDS = 15V, ID = 104A
VDS = 20V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 104A
VDS = 16V
VGS = 10V
VDD = 11V
ID = 104A
RG = 4.5Ω
VGS = 10V
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 16V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 16V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 174
A
showing the
integral reverse
G
––– ––– 700
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 104A, VGS = 0V
––– 66 100 ns TJ = 25°C, IF = 104A
––– 130 200 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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