K2981 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Fabricante

K2981

N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2981

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Low on-resistance

RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A)

RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A)

RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A)

• Low Ciss : Ciss = 860 pF (TYP.)

• Built-in gate protection diode

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK2981

TO-251

2SK2981-Z

TO-252

PACKAGE DRAWING (Unit : mm)

6.5 ±0.2

5.0 ±0.2

4

1 23

1.3 MAX.

2.3 ±0.2

0.5 ±0.1

0.6 ±0.1

2.3 2.3

0.6 ±0.1

1. Gate

2. Drain

3. Source

4. Fin (Drain)

TO-251(MP-3)

6.5 ±0.2

5.0 ±0.2

4

2.3 ±0.2

0.5 ±0.1

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage (VGS = 0)

VDSS

30

V

Gate to Source Voltage (VDS = 0)

VGSS

±20

V

Drain Current (DC)

Drain Current (Pulse) Note

ID(DC)

±20

A

ID(pulse)

±80

A

Total Power Dissipation (Tc = 25 °C)

PT

20

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg –55 to + 150 °C

Note PW ≤ 10 µs, Duty cycle ≤ 1 %

12 3

1.3 MAX.

2.3 2.3

0.9 0.8

MAX. MAX.

0.8

1. Gate

2. Drain

3. Source

4. Fin (Drain)

TO-252(MP-3Z) (SURFACE MOUNT TYPE)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Gate

Protection

Diode

Source

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice.

Document No. D12355EJ1V0DS00 (1st edition)

Date Published December 1998 NS CP(K)

Printed in Japan

©

1998

Share Link: