PZT3906(1997) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
PZT3906 Datasheet PDF : 6 Pages
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PNP General Purpose Amplifier
(continued)
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
2N3906
625
5.0
83.3
*PZT3906
1,000
8.0
200
125
Units
mW
mW /°C
°C/W
°C/W
Symbol
Characteristic
Max
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
**MMBT3906
350
2.8
357
MMPQ3906
1,000
8.0
125
240
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Units
mW
mW /°C
°C/W
°C/W
°C/W
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
250
Vce = 1V
125 °C
200
150
25 °C
100
- 40 °C
50
0.1 0.2 0.5 1 2
5 10 20 50 100
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1 β = 10
0.8
0.6
- 40 ºC
25 °C
125 ºC
0.4
0.2
0
1
10
100 200
I C - COLLECTOR CURRENT (mA)
P 66
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
β = 10
0.25
0.2
0.15
25 °C
0.1
0.05
0
1
125 ºC
- 40 ºC
10
100 200
IC - COLLECTOR CURRENT (mA)
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
25 °C
0.6
125 ºC
0.4
0.2
V CE = 1V
0
0.1
1
10
25
I C - COLLECTOR CURRENT (mA)
P 66
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