2N3906TF(2011) Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

2N3906TF
(Rev.:2011)

PNP General Purpose Amplifier

Fairchild Semiconductor 

2N3906 / MMBT3906 / PZT3906

PNP General Purpose Amplifier

October 2011

Features

• This device is designed for general purpose amplifier and switching applications at collector currents of 10μA to 100

mA.

2N3906

EBC

TO-92

MMBT3906

C

SOT-23

Mark:2A

E

B

PZT3906

C

SOT-223

E

C

B

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCEO

Collector-Emitter Voltage

-40

V

VCBO

Collector-Base Voltage

-40

V

VEBO

Emitter-Base Voltage

-5.0

V

IC

Collector Current - Continuous

-200

mA

TJ, Tstg Operating and Storage Junction Temperature Range

-55 to +150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics Ta = 25°C unless otherwise noted

Symbol

Parameter

2N3906

Max.

*MMBT3906 **PZT3906

Units

PD

Total Device Dissipation

Derate above 25°C

625

350

1,000

mW

5.0

2.8

8.0

mW/°C

RθJC

Thermal Resistance, Junction to Case

83.3

°C/W

RθJA

Thermal Resistance, Junction to Ambient

200

357

125

°C/W

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

© 2011 Fairchild Semiconductor Corporation

2N3906 / MMBT3906 / PZT3906 Rev. B0

1

www.fairchildsemi.com

Share Link: