PN4258 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
PN4258 Datasheet PDF : 8 Pages
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Typical Chracteristics
vs Collector Current
200
VCE = 1.0V
125 °C
150
100 25 °C
50 - 40 °C
0
0.1 0.2 0.5 1 2
5 10 20 50 100
I C - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
β βVoltage vs Collector Current
1.2
1
β
β = 10
ββ
- 40 °C
0.8
25 °C
125 °C
0.6
0.4
0.2
0
0.1
1
10
100
I C- COLLECTOR CURRE NT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
10 0
V = 10V
CB
10
1
0.1
0.01
25
50
75
10 0
12 5
TA - AMBIE NT TEMP ERATURE (° C)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
ββ
0.5
Vβ oβltage vs Collector Current
β
β = 10
0.4
0.3
0.2
125 °C
0.1
25 °C
- 40 °C
0
0.1
1
10
100
I C - COLLECTOR CURRE NT (mA)
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Collector Current
1
- 40 °C
0.8
25 °C
0.6
125 °C
0.4
0.2
VCE = 1V
0
0.1
1
10
25
I C - COLLECTOR CURRE NT (mA)
Figure 4. Base-Emitter On Voltage
vs Collector Current
700
600
500
400 SOT-23
300
200
100
0
0
25
TO-92
50
75
100
125
150
TEMPERATURE (oC)
Figure 6. Power Dissipation
vs Ambient Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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