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Número de pieza

componentes Descripción

Fabricante

SMBTA70

PNP Silicon Transistor

Infineon Technologies 

SMBTA 70

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

Emitter-base breakdown voltage

IE = 100 µA

Collector-base cutoff current

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0, TA = 150 ˚C

Emitter-base cutoff current

VEB = 4 V, IC = 0

DC current gain

IC = 5 mA, VCE = 10 V

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 1 mA

AC characteristics

Transition frequency

IC = 5 mA, VCE = 10 V, f = 100 MHz

Output capacitance

VCB = 10 V, f = 1 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 40

–

V(BR)EB0 4

–

ICB0

–

–

–

–

IEB0

–

–

hFE

40

–

VCEsat

–

–

–

V

–

100 nA

20

µA

20 nA

400 –

0.25 V

fT

125 –

–

MHz

Cobo

–

–

4

pF

1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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