PN2907A Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
PN2907A Datasheet PDF : 4 Pages
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Transistors
UMT2907A / SST2907A / MMST2907A / PN2907A
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Collector-base breakdown voltage
BVCBO
−60
Collector-emitter breakdown voltage
BVCEO
−60
Emitter-base breakdown voltage
BVEBO
−5
Collector cutoff current
ICBO
−
ICES
−
Emitter cutoff current
IEBO
−
−
Collector-emitter saturation voltage
VCE(sat)
−
Base-emitter saturation voltage
0.6
VBE(sat)
−
75
100
DC current transfer ratio
hFE
100
100
Transition frequency
50
fT
200
Collector output capacitance
Cob
−
Emitter input capacitance
Cib
−
Turn-on time
ton
−
Delay time
td
−
Rise time
tr
−
Turn-off time
toff
−
Storage time
tstg
−
Fall time
tf
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
−100
−100
−100
−0.4
−1.6
−1.3
−2.6
−
−
−
300
−
−
8
30
50
10
40
100
80
30
Unit
V
V
V
nA
nA
V
V
−
MHz
pF
pF
ns
ns
ns
ns
ns
ns
Conditions
IC=10µA
IC=10mA
IE=10µA
VCB=−50V
VCB=−30V
VEB=−3V
IC/IB=−150mA/−15mA
IC/IB=−500mA/−50mA
IC/IB=−150mA/−15mA
IC/IB=−500mA/−50mA
VCE=−10V, IC=−0.1mA
VCE=−10V, IC=−1mA
VCE=−10V, IC=−10mA
VCE=−10V, IC=−150mA
VCE=−10V, IC=−500mA
VCE=−20V, IC=−50mA, f=100MHz
VCB=−10V, f=100kHz
VEB=−2V, f=100kHz
VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA
VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA
VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA
VCC=−30V, IC=−150mA, IB1=IB2=−15mA
VCC=−30V , IC=−150mA, IB1=IB2=−15mA
VCC=−30V, IC=−150mA, IB1=IB2=−15mA
!Electrical characteristic curves
100
Ta=25˚C
600
500
400
50
300
200
100
1B=0µA
0
0
5
10
COLLECTOR-EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics
1000
100
1.8
Ta=25˚C
1.6
IC / IB=10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.2 Base-emitter saturation
voltage vs. collector current
Ta=25˚C
VCE=10V
1V
10
0.1
1.0
10
100
COLLECTOR CURRENT : IC (mA)
1000
Fig.3 DC current gain vs. collector current ( I )
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