MMST4403(RevB) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
MMST4403 Datasheet PDF : 4 Pages
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Transistors
SST4403 / MMST4403 / 2N4403
1.8
Ta=25˚C
1.6
VCE=10V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.7 Grounded emitter propagation
characteristics
1000
100
Ta=25˚C
VCE=10V
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.8 Gain bandwidth product
vs. collector current
100
100MHz
200MHz
10
300MHz
Ta=25˚C
250MHz
1
200MHz
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.9 Gain bandwidth product
100
10
Cib
Cob
Ta=25˚C
f=1MHz
1000
100
500
Ta=25˚C
IC / IB=10
100
VCC=30V
Ta=25˚C
VCC=30V
IC / IB=10
1
0.1
1
10
100
REVERSE BIAS VOLTAGE (V)
Fig.10 Input /output capacitance
vs. voltage
10V
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.11 Turn-on time vs.collector
current
10
5
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.12 Rise time vs. collector
current
1000
100
Ta=25˚C
VCC=30V
IC=10IB1=10IB2
1000
100
Ta=25˚C
VCC=30V
IC=10IB1=10IB2
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.13 Storage time vs. collector
current
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.14 Fall time vs. collector
current
Rev.B
3/3
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