SSTA56(RevA) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
SSTA56 Datasheet PDF : 3 Pages
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Transistors
SSTA56 / MMSTA56
zElectrical characteristic curves
500
Ta=25°C
4.5mA
4.0mA
3.5mA
400
3.0mA
300
200
5.0mA
2.5mA
2.0mA
1.5mA
1.0mA
1000
100
Ta=25°C
VCC=5V
3V
1V
0.5mA
100
IB=0mA
0
0
0.4 0.8 1.2 1.6
2.0
VCE-COLLECTOR-EMITTER VOLTAGE (V)
Fig.1 Grounded emitter output
characteristics
10
1 2 5 10 20 50 100 200 5001000
IC-COLLECTOR CURRENT (mA)
Fig.2 DC current gain vs. collector
current ( Ι )
1000
100
Ta=125°C
25°C
−40°C
VCE=3V
10
1
10
100
1000
IC-COLLECTOR CURRENT (mA)
Fig.3 DC current gain vs. collector
current ( ΙΙ )
IC / IB=10
0.3
Ta=125°C
0.2
25°C
−40°C
0.1
0
1
10
100
1000
IC-COLLECTOR CURRENT (mA)
Fig.4 Collector emitter saturation
voltage vs. collector current
1.8
Ta=25°C
1.6
IC / IB=10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
10
100
1000
IC-COLLECTOR CURRENT (mA)
Fig.5 Base-emitter saturation
voltage vs. collector current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
VCE=3V
Ta=−40°C
25°C
125°C
10
100
1000
IC-COLLECTOR CURRENT (mA)
Fig.6 Grounded emitter propagation
characteristics
500
1000
Ta=25°C
f=1MHz
100
Cib
100
Ta=25°C
VCE=10V
Cob
10
5
0.5 1
10
50
REVERSE BIAS VOLTAGE (V)
Fig.7 Input/output capecitance
vs. voltage
!
10
1
10
100
1000
IC-COLLECTOR CURRENT (mA)
Fig.8 Gain bandwidth product
vs. collector current
Rev.A
2/2
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