SSTA56(RevA) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
SSTA56 Datasheet PDF : 3 Pages
| |||
Transistors
SSTA56 / MMSTA56
PNP general purpose transistor
SSTA56 / MMSTA56
zFeatures
1) BVCEO 40V (IC = 100PA)
2) Complements the SSTA06 / MMSTA06.
zPackage, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SSTA56
SST3
R2G
T116
3000
MMSTA56
SMT3
R2G
T146
3000
zExternal dimensions (Unit : mm)
SSTA56
ROHM : SST3
JEDEC : SOT-23
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
−0.1
0.45±0.1
(1)
(2)
(3)
0.4
+0.1
−0.05
0.15
+0.1
−0.06
All terminals have same dimensions
0~0.1
0.2Min.
(1) Emitter
(2) Base
(3) Collector
MMSTA56
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1
+0.2
−0.1
0.8±0.1
0~0.1
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(3)
0.4
+0.1
−0.05
0.15
+0.1
−0.06
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
zAbsolute maximum ratings (Ta=25qC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Storage temperature
∗ Mounted on a 7×5×0.6mm CERAMIC SUBSTRATE
Tj
Tstg
Limits
−80
−80
−4
−0.5
0.2
0.35
150
−55 to +150
Unit
V
V
V
A
W
W∗
°C
°C
zElectrical characteristics (Ta=25qC)
Parameter
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Symbol
BVEBO
BVCEO
ICBO
ICEO
VCE(sat)
VBE(on)
hFE
fT
Min. Typ. Max. Unit
Conditions
−4
−
−
V IC = −100mA
−80
−
−
V
IC = −1mA
−
−
−0.1
VCB= −80V
μA
−
−
−1
VCE= −60V
−
−
0.25
V
IC /IB= −100mA/−10mA
−
−
−1.2
V
VCE/IB= −1V/100mA
100
−
−
VCE= −1V , IC = −10mA
−
100
−
−
VCE= −1V , IC = −100mA
50
−
−
MHz VCE= −1V , IE= 100mA , f=100MHz
Rev.A
1/2
Share Link: 