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BD180G

Plastic Medium Power Silicon PNP Transistor

ON Semiconductor 

BD180

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic

Symbol

Min

Max

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 0.1 Adc, IB = 0)

V(BR)CEO

80

−

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 45 Vdc, IE = 0)

(VCB = 80 Vdc, IE = 0)

BD180

ICBO

mAdc

−

−

−

1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VBE = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 0.15 A, VCE = 2.0 V)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.0 A, VCE = 2.0 V)

hFE

−

40

250

15

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage (Note 1)

(IC = 1.0 Adc, IB = 0.1 Adc)

VCE(sat)

−

0.8

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter On Voltage (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current−Gain − Bandwidth Product

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1. Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%.

VBE(on)

−

1.3

Vdc

fT

3.0

−

MHz

10

7.0

100 ms

5.0

1.0 ms

3.0

2.0

5.0 ms

dc

1.0 TJ = 150°C

0.7

0.5

0.3

0.2

0.1

1.0

SECONDARY BREAKDOWN LIMITATION

THERMAL LIMITATION

(BASE-EMITTER DISSIPATION IS

SIGNIFICANT ABOVE IC = 20 AMP)

PULSE DUTY CYCLE < 10%

BD180

2.0 3.0 5.0 7.0 10

20 30 50 70 100

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

The Safe Operating Area Curves indicate IC − VCE limits

below which the device will not enter secondary breakdown.

Collector load lines for specific circuits must fall within the

applicable Safe Area to avoid causing a catastrophic failure. To

insure operation below the maximum TJ, power−temperature

derating must be observed for both steady state and pulse

power conditions.

1.0

TJ = 25°C

0.8

0.6

0.4

0.2

0

0.2

0.5

IC = 0.1 A

0.25 A

0.5 A

1.0

2.0

5.0

10

20

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

http://onsemi.com

2

1.0 A

50

100

200

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