RN731V(Old_V) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RN731V Datasheet PDF : 2 Pages
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Diodes
PIN diode
RN731V
!Applications
VHF/UHF band variable attenuators and AGC.
!Features
1) Small surface mounting type. (UMD2)
2) Low high-frequency forward resistance (rF) / low
capacitance (CT).
3) High reliability.
!Construction
Silicon diffusion junction
RN731V
!External dimensions (Units : mm)
CATHODE MARK
CATHODE MARK
9
0.3±0.2
1.25±0.1
0.1
+0.1
−0.05
0.7
+0.2
−0.1
9
0.3±0.2
1.25±0.1
0.1
+0.1
−0.05
0.7
+0.2
−0.1
ROHM : UMD2
EIAJ : SC - 76
JEDEC : SOD - 323
∗ There are two different markings.
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
DC reverse voltage
VR
50
V
DC forward current
IF
50
mA
Power dissipation
Pd
100
mW
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
−55∼+125
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF
−
−
1.0
V
IF=50mA
Reverse current
IR
−
−
100
nA VR=50V
Capacitance between terminals
CT
−
−
0.4
pF VR=35V, f=1MHz
Forward operating resistance
rF
−
−
7
Ω
IF=10mA, f=100MHz
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