NTE3036 Ver la hoja de datos (PDF) - NTE Electronics

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NTE3036

Phototransistor Silicon NPN Photo Darlington Light Detector

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Optical Characteristics

Light Current

Collector–Emitter Saturation Voltage

Photo Current Rise Time

Photo Current Fall Time

IL

VCE(sat)

tr

tf

VCC = 5V, RL = 10Ω, Note 1

IL = 10mA, H = 2mW/cm2 at 2870°K

RL = 10Ω, IL = 1mA Peak, Note 2

RL = 10Ω, IL = 1mA Peak, Note 2

12 20 – mA

– 0.6 1.0 V

– 15 100 µs

– 65 150 µs

Note 1. Radiation flux density (H) is equal to 0.5mW/cm2 emitted from a tungsten source at a color

temperature of 2780°K.

Note 2. For unsaturated response time measurement, radiation is provided by pulse GaAs (gallium–

arsenide) light emitting diode (λ 0.9µm) with a pulse width equal to or greater than 500µs,

IL = 1mA peak.

.228 (5.79) Max

.185 (4.69)

.177

(4.5)

.276

(7.01)

Max

Emitter

.500

(12.7)

Min

.018 (0.45) Dia Typ

.100 (2.54) Dia

Base

Collector/Case

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