QRB1134 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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QRB1134 Datasheet PDF : 4 Pages
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PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
EMITTER
Continuous Forward Current
Reverse Voltage
Power Dissipation(1)
SENSOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation(1)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
VR
PD
VCEO
VECO
IC
PD
Rating
-40 to +85
-40 to +85
240 for 5 sec
260 for 10 sec
50
5
100
30
50
20
100
NOTES
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. D is the distance from the assembly face to the reflective surface.
6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.
7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA = 25°C)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
EMITTER
Forward Voltage
IF = 40 mA
VF
—
—
Reverse Current
Peak Emission Wavelength
SENSOR
Collector-Emitter Breakdown Voltage
VR = 2.0 V
IF = 20 mA
IC = 1 mA
IR
—
—
!PE
—
940
BVCEO
30
—
Emitter-Collector Breakdown Voltage
IE = 0.1 mA
BVECO
5
—
Collector-Emitter Dark Current
VCE = 10 V, IF = 0 mA
ICEO
—
—
COUPLED
On-state Collector Current
QRB1133
IF = 40 mA, VCE = 5 V
D = .150”(5,6)
IC(ON)
0.20
—
QRB1134
0.60
—
Collector-Emitter
Saturation Voltage
IF = 20 mA, IC = 0.5 mA
VCE (SAT)
—
—
Rise Time
Fall Time
Cross Talk
VCE = 5 V, RL = 100 "
tr
—
8
IC(ON) = 5 mA
tf
—
8
IF = 40 mA, VCE = 5 V(7)
ICX
—
—
www.fairchildsemi.com
2 OF 4
Units
°C
°C
°C
°C
mA
V
mW
V
V
mA
mW
MAX
1.7
100
—
—
—
100
UNITS
V
µA
nm
V
V
nA
mA
—
0.4
V
—
µs
—
1.00
µA
7/02/01 DS300351
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