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QRB1134

PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR

Fairchild Semiconductor 

PHOTOTRANSISTOR

REFLECTIVE OBJECT SENSORS

QRB1133 QRB1134

PACKAGE DIMENSIONS

24.0 (609.60)

MIN #26 AWG

(A)

(K)

0.420 (10.67)

0.328 (8.33)

0.150 (3.81)

NOM

0.226 (5.74)

0.373 (9.47)

0.703 (17.86)

(E)

(C)

0.020 (0.51)

4X

0.300 (7.62)

0.150 (3.81)

MIN

0.603 (15.32)

FUNCTION

(C) COLLECTOR

(E) EMITTER

(K) CATHODE

(A) ANODE

WIRE COLOR

WHITE

BLUE

GREEN

ORANGE

REFLECTIVE

SURFACE

0.210 (5.33)

SCHEMATIC

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions

unless otherwise specified.

AK

CE

DESCRIPTION

The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converg-

ing optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective

object passes within its field of view. The area of the optimum response approximates a circle .200” in diameter.

FEATURES

• Phototransistor output

• High Sensitivity

• Low cost plastic housing

• #26 AWG, 24 inch PVC wire termination

• Infrared transparent plastic covers for dust protection

 2001 Fairchild Semiconductor Corporation

DS300351 7/02/01

1 OF 4

www.fairchildsemi.com

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