H11AG1SR2VM Ver la hoja de datos (PDF) - Fairchild Semiconductor

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Fabricante

H11AG1SR2VM

Phototransistor Optocoupler

Fairchild Semiconductor 

September 2009

H11AG1M

Phototransistor Optocoupler

Features

■ High efficiency low degradation liquid epitaxial IRED

■ Logic level compatible, input and output currents,

with CMOS and LS/TTL

■ High DC current transfer ratio at low input currents

(as low as 200µA)

■ Underwriters Laboratory (UL) recognized File

#E90700, Volume 2

■ IEC 60747-5-2 approved (ordering option V)

Applications

■ CMOS driven solid state reliability

■ Telephone ring detector

■ Digital logic isolation

Description

The H11AG1M device consists of a Gallium-Aluminum-

Arsenide IRED emitting diode coupled with a silicon

phototransistor in a dual in-line package. This device

provides the unique feature of the high current transfer

ratio at both low output voltage and low input current.

This makes it ideal for use in low power logic circuits,

telecommunications equipment and portable electronics

isolation applications.

Schematic

ANODE 1

CATHODE 2

N/C 3

6 BASE

5 COL

4 EMITTER

6

6

1

1

6

1

©2007 Fairchild Semiconductor Corporation

H11AG1M Rev. 1.0.3

www.fairchildsemi.com

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