H11AG1SR2M(2015) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
H11AG1SR2M Datasheet PDF : 13 Pages
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Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Parameters
Test Conditions
EMITTER
VF
Input Forward Voltage
IR
Reverse Leakage Current
CJ
Capacitance
IF = 1 mA
VR = 5 V, TA = 25°C
V = 0, f = 1.0 MHz
DETECTOR
BVCEO Breakdown Voltage, Collector-to-Emitter IC = 1.0 mA, IF = 0
BVCBO Breakdown Voltage, Collector-to-Base IC = 100 µA, IF = 0
BVECO Breakdown Voltage, Emitter-to-Collector IC = 100 µA, IF = 0
ICEO
CCE
Leakage Current, Collector-to-Emitter
Capacitance
VCE = 10 V, IF = 0
VCE = 10 V, f = 1 MHz
Min. Typ. Max. Unit
1.25 1.50
V
10
µA
100
pF
30
V
70
V
7
V
5
10
µA
10
pF
Transfer Characteristics
Symbol
Characteristics
Test Conditions
DC CHARACTERISTICS
IF = 1 mA, VCE = 5 V
CTR
Current Transfer Ratio IF = 1 mA, VCE = 0.6 V
IF = 0.2 mA, VCE = 1.5 V
VCE(SAT) Saturation Voltage
IF = 2.0 mA, IC = 0.5 mA
AC CHARACTERISTICS (Non-Saturated Switching Times)
ton
Turn-On Time
toff
Turn-Off Time
RL = 100 Ω, IF = 1 mA, VCC = 5 V
RL = 100 Ω, IF = 1 mA, VCC = 5 V
Min. Typ. Max. Unit
300
%
100
%
100
%
0.40
V
5
µs
5
µs
Isolation Characteristics
Symbol
Characteristic
Test Conditions
VISO
CISO
RISO
Input-Output Isolation Voltage t = 1 Minute
Isolation Capacitance
Isolation Resistance
VI-O = 0 V, f = 1 MHz
VI-O = ±500 VDC, TA = 25°C
Min.
4170
1011
Typ.
0.2
Max.
Unit
VACRMS
pF
Ω
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
4
www.fairchildsemi.com
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