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H11AG1TVM(2015) Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
H11AG1TVM
(Rev.:2015)
Fairchild
Fairchild Semiconductor Fairchild
H11AG1TVM Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
TOTAL DEVICE
TSTG
TOPR
TJ
TSOL
PD
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
EMITTER
IF
VR
IF(pk)
PD
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (1 µs pulse, 300 pps)
LED Power Dissipation @ 25°C
Derate Linearly From 25°C
DETECTOR
IC
Continuous Collector Current
Detector Power Dissipation @ 25°C
PD
Derate Linearly From 25°C
Value
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
225
3.5
50
6
3.0
75
1.0
50
150
2.0
Unit
°C
°C
ºC
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mA
mW
mW/°C
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
3
www.fairchildsemi.com

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