H11AG1VM(2015) Ver la hoja de datos (PDF) - Fairchild Semiconductor

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Fabricante

H11AG1VM
(Rev.:2015)

6-Pin DIP Phototransistor Optocoupler

Fairchild Semiconductor 

April 2015

H11AG1M

6-Pin DIP Phototransistor Optocoupler

Features

■ High-Efficiency Low-Degradation Liquid Epitaxial

IRED

■ Logic Level Compatible, Input and Output Currents,

with CMOS and LS/TTL

■ High DC Current Transfer Ratio at Low Input Currents

(as low as 200 µA)

■ Safety and Regulatory Approvals:

– UL1577, 4,170 VACRMS for 1 Minute

– DIN-EN/IEC60747-5-5, 850 V Peak Working

Insulation Voltage

Applications

■ CMOS Driven Solid State Reliability

■ Telephone Ring Detector

■ Digital Logic Isolation

Description

The H11AG1M device consists of a Gallium-Aluminum-

Arsenide IRED emitting diode coupled with a silicon

phototransistor in a dual in-line package. This device

provides the unique feature of high current transfer ratio

at both low output voltage and low input current. This

makes it ideal for use in low-power logic circuits, tele-

communications equipment and portable electronics

isolation applications.

Schematic

Package Outlines

ANODE 1

CATHODE 2

6 BASE

5 COLLECTOR

N/C 3

4 EMITTER

Figure 1. Schematic

6

6

1

1

6

1

Figure 2. Package Outlines

©2007 Fairchild Semiconductor Corporation

H11AG1M Rev. 1.4

www.fairchildsemi.com

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