CNY17F Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
CNY17F Datasheet PDF : 4 Pages
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Figure 15. Saturation voltage versus
collector current and modulation depth
CNY17F-4 VCEsat=f (IC) (TA=25°C)
Figure 17. Permissible power dissipa-
tion transistor and diode Ptot=f(TA)
Figure 19. Transistor capacitance
C=f(VO)(TA=25°C, f=1.0 MHz)
Figure 16. Permissible pulse load
D=parameter, TA=25°C, IF=f(tp)
Figure 18. Permissible forward current
diode IF=f(TA)
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
4
CNY17F
March 17, 2000-13
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